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IRF640 N-Channel Power MOSFET 200V ,18A ,125W
IRF640 N-Channel Power MOSFET 200V ,18A ,125W
- N-Channel Power MOSFET
- Continuous Drain Current (ID): 18A
- Drain to Source Breakdown Voltage: 200V
- Drain Source Resistance (RDS) is 0.15 Ohms
- Available in To-220 package
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25,00EGP
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Description
IRF640 N-Channel Power MOSFET 200V ,18A ,125W
Specifications:
| Attribute | Value |
| Channel Type | N |
| Maximum Continuous Drain Current | 18 A |
| Maximum Drain Source Voltage | 200 V |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 150 m? |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 150 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +175 ?C |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 67 nC @ 10 V |
| Transistor Material | Si |
| Series | HEXFET |
| Height | 8.77mm |
| Minimum Operating Temperature | -55 ?C |
Package Includes:
- 1x IRF640 MOSFET
Datasheet:
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