IRF840 N-Channel MOSFET, 8A, 500V, 3-Pin TO-220

IRF840 N-Channel MOSFET, 8A, 500V, 3-Pin TO-220

  • N-Channel Power MOSFET
  • Continuous Drain Current (ID): 8A
  • Gate threshold voltage (VGS-th) is 10V (limit = ?20V)
  • Drain to Source Breakdown Voltage: 500V
  • Drain Source Resistance (RDS) is 0.85 Ohms
  • Rise time and fall time is 23nS and 20nS
  • Available in To-220 package
SKU: 25640

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IRF840 N-Channel MOSFET, 8A, 500V, 3-Pin TO-220

Attribute Value
Channel Type N
Maximum Continuous Drain Current 8 A
Maximum Drain Source Voltage 500 V
Package Type TO-220AB
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 850 m?
Channel Mode Enhancement
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 125 W
Transistor Configuration Single
Maximum Gate Source Voltage -30 V, +30 V
Number of Elements per Chip 1
Height 9.01mm
Typical Gate Charge @ Vgs 38 nC @ 10 V
Minimum Operating Temperature -55 ?C
Width 4.7mm
Transistor Material Si
Length 10.41mm
Maximum Operating Temperature +150 ?C


Package Includes:

  • 1x IRF840 MOSFET


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